Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Goford SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)12A (Tc)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V44mOhm @ 12A, 10V57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V21 nC @ 10 V186 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1125 pF @ 20 V15870 pF @ 30 V
Power Dissipation (Max)
710mW (Ta)2.5W (Ta), 50W (Tc)294W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-252 (DPAK)TO-263
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
338,119
In Stock
1 : ¥3.45000
Cut Tape (CT)
2,500 : ¥1.60091
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
12A (Tc)
4.5V, 10V
44mOhm @ 12A, 10V
3V @ 250µA
21 nC @ 10 V
±20V
1125 pF @ 20 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
SI2302CDS-T1-GE3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
62,186
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.34537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
GC11N65M
G080P06M
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Goford Semiconductor
770
In Stock
1 : ¥15.52000
Cut Tape (CT)
800 : ¥8.68783
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
10V
7.5mOhm @ 20A, 10V
4V @ 250µA
186 nC @ 10 V
±20V
15870 pF @ 30 V
-
294W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.