Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)18.5A (Tc)22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs
4.1mOhm @ 22A, 10V6mOhm @ 20A, 10V17mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.3V @ 10µA2.5V @ 250µA2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V14.9 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V1009 pF @ 15 V5850 pF @ 15 V
Power Dissipation (Max)
860mW (Ta)3W (Ta)11.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
6-PQFN (2x2) (DFN2020)8-HSOPU-DFN2020-6 (Type F)
Package / Case
6-PowerVDFN6-UDFN Exposed Pad8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-PowerVDFN
IRL60HS118
MOSFET N-CH 60V 18.5A 6PQFN
Infineon Technologies
35,903
In Stock
1 : ¥7.72000
Cut Tape (CT)
4,000 : ¥2.94797
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18.5A (Tc)
4.5V, 10V
17mOhm @ 11A, 10V
2.3V @ 10µA
8 nC @ 4.5 V
±20V
660 pF @ 25 V
-
11.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
6-PQFN (2x2) (DFN2020)
6-PowerVDFN
HSOP8
RS1E220ATTB1
MOSFET P-CH 30V 22A/76A 8HSOP
Rohm Semiconductor
8,161
In Stock
1 : ¥21.67000
Cut Tape (CT)
2,500 : ¥9.77066
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
4.1mOhm @ 22A, 10V
2.5V @ 2mA
130 nC @ 10 V
±20V
5850 pF @ 15 V
-
3W (Ta)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
U-DFN2020-6 Type F
DMT35M4LFDF-7
MOSFET BVDSS: 25V~30V U-DFN2020-
Diodes Incorporated
2,953
In Stock
54,000
Factory
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.31248
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
2.5V @ 250µA
14.9 nC @ 10 V
±20V
1009 pF @ 15 V
-
860mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.