Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
-OptiMOS™PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V150 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)1.6A (Ta)5.47A (Ta)24.5A (Tc)87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V2.5V, 4.5V6V, 10V7.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 44A, 10V29mOhm @ 6A, 10V35.5mOhm @ 10A, 10V261mOhm @ 1.6A, 10V4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.2V @ 250µA3.5V @ 250µA4V @ 250µA4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V5 nC @ 10 V5.4 nC @ 4.5 V22 nC @ 10 V40.7 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 15 V225 pF @ 75 V434.7 pF @ 10 V1045 pF @ 25 V3230 pF @ 75 V
Power Dissipation (Max)
350mW (Ta)740mW (Ta)1.5W (Ta)55W (Tc)139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-7PowerPAK® SO-8SOT-23-3TO-236AB
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN86246
MOSFET N-CH 150V 1.6A SUPERSOT3
onsemi
322
In Stock
1 : ¥10.59000
Cut Tape (CT)
3,000 : ¥4.38702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
1.6A (Ta)
6V, 10V
261mOhm @ 1.6A, 10V
4V @ 250µA
5 nC @ 10 V
±20V
225 pF @ 75 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC093N15NS5ATMA1
MOSFET N-CH 150V 87A TDSON
Infineon Technologies
1,171
In Stock
1 : ¥27.34000
Cut Tape (CT)
5,000 : ¥12.77754
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
87A (Tc)
8V, 10V
9.3mOhm @ 44A, 10V
4.6V @ 107µA
40.7 nC @ 10 V
±20V
3230 pF @ 75 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
SOT-23-3
DMG3420U-7
MOSFET N-CH 20V 5.47A SOT23-3
Diodes Incorporated
204,613
In Stock
2,190,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.40266
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
5.47A (Ta)
1.8V, 10V
29mOhm @ 6A, 10V
1.2V @ 250µA
5.4 nC @ 4.5 V
±12V
434.7 pF @ 10 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPak® SO-8
SQJ872EP-T1_GE3
MOSFET N-CH 150V 24.5A PPAK SO-8
Vishay Siliconix
3,000
In Stock
1 : ¥11.49000
Cut Tape (CT)
3,000 : ¥4.76620
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
24.5A (Tc)
7.5V, 10V
35.5mOhm @ 10A, 10V
3.5V @ 250µA
22 nC @ 10 V
±20V
1045 pF @ 25 V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-236AB
NX3008PBKVL
MOSFET P-CH 30V 230MA TO236AB
Nexperia USA Inc.
8,962
In Stock
1 : ¥2.22000
Cut Tape (CT)
10,000 : ¥0.19190
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
230mA (Ta)
2.5V, 4.5V
4.1Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72 nC @ 4.5 V
±8V
46 pF @ 15 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.