Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 5V
Rds On (Max) @ Id, Vgs
130mOhm @ 3.5A, 4.5V200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 5 V8.5 nC @ 4.5 V
Vgs (Max)
±8V±10V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V405 pF @ 10 V
Power Dissipation (Max)
2.5W (Ta)2.5W (Ta), 25W (Tc)
Supplier Device Package
8-SOICDPAK
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS9431A
MOSFET P-CH 20V 3.5A 8SOIC
onsemi
4,386
In Stock
5,000
Factory
1 : ¥7.39000
Cut Tape (CT)
2,500 : ¥2.80158
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
2.5V, 4.5V
130mOhm @ 3.5A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±8V
405 pF @ 10 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
D-PAK (TO-252AA)
IRLR014PBF
MOSFET N-CH 60V 7.7A DPAK
Vishay Siliconix
2,242
In Stock
1 : ¥8.29000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7.7A (Tc)
4V, 5V
200mOhm @ 4.6A, 5V
2V @ 250µA
8.4 nC @ 5 V
±10V
400 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.