Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)25A (Tc)40A (Ta), 100A (Tc)41A (Ta), 100A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.62mOhm @ 20A, 10V0.9mOhm @ 30A, 10V0.95mOhm @ 30A, 10V30mOhm @ 25A, 10V12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.7V @ 100µA2V @ 250µA2.2V @ 250µA2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs
16.3 nC @ 10 V49 nC @ 10 V57 nC @ 10 V188 nC @ 10 V
Vgs (Max)
±16V+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.1 pF @ 3 V1220 pF @ 25 V3200 pF @ 12 V3900 pF @ 12 V9530 pF @ 15 V
Power Dissipation (Max)
100mW (Ta)2.5W (Ta), 74W (Tc)29W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C
Supplier Device Package
PG-TDSON-8-7PG-TO252-3-11PowerPAK® SO-8SSM
Package / Case
8-PowerTDFNPowerPAK® SO-8SC-75, SOT-416TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC009NE2LS5ATMA1
MOSFET N-CH 25V 41A/100A TDSON
Infineon Technologies
9,831
In Stock
1 : ¥15.60000
Cut Tape (CT)
5,000 : ¥6.76301
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
41A (Ta), 100A (Tc)
4.5V, 10V
0.9mOhm @ 30A, 10V
2V @ 250µA
57 nC @ 10 V
±16V
3900 pF @ 12 V
-
2.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
13,998
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.33909
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
±20V
9.1 pF @ 3 V
-
100mW (Ta)
150°C
-
-
Surface Mount
SSM
SC-75, SOT-416
TO252-3
IPD25N06S4L30ATMA2
MOSFET N-CH 60V 25A TO252-31
Infineon Technologies
14,454
In Stock
1 : ¥8.54000
Cut Tape (CT)
2,500 : ¥3.53813
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
30mOhm @ 25A, 10V
2.2V @ 8µA
16.3 nC @ 10 V
±16V
1220 pF @ 25 V
-
29W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK SO-8
SIRA80DP-T1-RE3
MOSFET N-CH 30V 100A PPAK SO-8
Vishay Siliconix
15,244
In Stock
1 : ¥12.56000
Cut Tape (CT)
3,000 : ¥5.65749
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
0.62mOhm @ 20A, 10V
2.2V @ 250µA
188 nC @ 10 V
+20V, -16V
9530 pF @ 15 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC009NE2LS5IATMA1
MOSFET N-CH 25V 40A/100A TDSON
Infineon Technologies
5,894
In Stock
1 : ¥17.98000
Cut Tape (CT)
5,000 : ¥7.80102
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
40A (Ta), 100A (Tc)
4.5V, 10V
0.95mOhm @ 30A, 10V
2V @ 250µA
49 nC @ 10 V
±16V
3200 pF @ 12 V
-
2.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.