Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
6A (Ta)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 10A, 10V36mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V18.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V957 pF @ 30 V
Power Dissipation (Max)
1.2W (Ta)34.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
MLPAK33SOT-23F
Package / Case
8-PowerVDFNSOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
32,148
In Stock
1 : ¥5.58000
Cut Tape (CT)
3,000 : ¥1.29846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
8-Power VDFN
PXN012-60QLJ
PXN012-60QL/SOT8002/MLPAK33
Nexperia USA Inc.
32,757
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.56569
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
42A (Tc)
4.5V, 10V
11.5mOhm @ 10A, 10V
2.5V @ 1mA
18.77 nC @ 10 V
±20V
957 pF @ 30 V
-
34.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.