Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
DTMOSIVTrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V650 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)7.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
17.4mOhm @ 7.9A, 10V1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V11 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 15 V390 pF @ 300 V
Power Dissipation (Max)
1.7W (Ta), 10.9W (Tc)60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DPAKMLPAK33
Package / Case
8-PowerVDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2,008
In Stock
1 : ¥15.60000
Cut Tape (CT)
2,000 : ¥4.49294
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
5.8A (Ta)
10V
1.05Ohm @ 2.9A, 10V
3.5V @ 180µA
11 nC @ 10 V
±30V
390 pF @ 300 V
-
60W (Tc)
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-Power VDFN
PXN017-30QLJ
PXN017-30QL/SOT8002/MLPAK33
Nexperia USA Inc.
470
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.31691
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
7.9A (Ta), 20A (Tc)
4.5V, 10V
17.4mOhm @ 7.9A, 10V
2.2V @ 250µA
7.7 nC @ 10 V
±20V
350 pF @ 15 V
-
1.7W (Ta), 10.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.