Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)8.6A (Ta)8.8A (Ta), 42A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 15A, 4.5V16mOhm @ 33A, 10V17mOhm @ 10A, 10V160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.1V @ 250µA2.5V @ 1mA3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V25 nC @ 10 V47 nC @ 10 V60 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 10 V1700 pF @ 50 V2230 pF @ 15 V4800 pF @ 10 V
Power Dissipation (Max)
320mW (Ta)900mW (Ta)20W (Tc)60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSMT (3.2x3)PG-TDSON-8-1POWERDI3333-8TUMT3
Package / Case
3-SMD, Flat Leads8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC160N10NS3GATMA1
MOSFET N-CH 100V 8.8A/42A TDSON
Infineon Technologies
22,425
In Stock
1 : ¥12.89000
Cut Tape (CT)
5,000 : ¥5.07391
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.8A (Ta), 42A (Tc)
6V, 10V
16mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-HSMT
RQ3C150BCTB
MOSFET P-CHANNEL 20V 30A 8HSMT
Rohm Semiconductor
6,247
In Stock
1 : ¥9.44000
Cut Tape (CT)
3,000 : ¥3.89355
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
30A (Tc)
4.5V
6.7mOhm @ 15A, 4.5V
1.2V @ 1mA
60 nC @ 4.5 V
±8V
4800 pF @ 10 V
-
20W (Tc)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
TUMT3
RRF015P03TL
MOSFET P-CH 30V 1.5A TUMT3
Rohm Semiconductor
5,315
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.05113
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
4V, 10V
160mOhm @ 1.5A, 10V
2.5V @ 1mA
6.4 nC @ 10 V
±20V
230 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
PowerDI3333-8
DMP3008SFGQ-13
MOSFET P-CH 30V 8.6A PWRDI3333-8
Diodes Incorporated
5,800
In Stock
6,000
Factory
1 : ¥7.06000
Cut Tape (CT)
3,000 : ¥3.77137
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.6A (Ta)
4.5V, 10V
17mOhm @ 10A, 10V
2.1V @ 250µA
47 nC @ 10 V
±20V
2230 pF @ 15 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.