Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Rohm SemiconductorVishay Siliconix
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)350mA (Ta)11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V10V
Rds On (Max) @ Id, Vgs
500mOhm @ 6.6A, 10V1.6Ohm @ 500mA, 10V8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA2.1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 5 V50 pF @ 10 V1200 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)370mW (Ta)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
EMT3TO-220ABTO-236AB
Package / Case
SC-75, SOT-416TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
808,156
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.36077
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
50 pF @ 10 V
-
370mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-220AB
IRF9640PBF
MOSFET P-CH 200V 11A TO220AB
Vishay Siliconix
26,154
In Stock
1 : ¥11.33000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
11A (Tc)
10V
500mOhm @ 6.6A, 10V
4V @ 250µA
44 nC @ 10 V
±20V
1200 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
2SA2018TL
2SK3019TL
MOSFET N-CH 30V 100MA EMT3
Rohm Semiconductor
32,465
In Stock
This product has a maximum purchase limit
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.52948
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
8Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13 pF @ 5 V
-
150mW (Ta)
150°C (TJ)
-
-
Surface Mount
EMT3
SC-75, SOT-416
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.