Single FETs, MOSFETs

Results: 2
Manufacturer
STMicroelectronicsToshiba Semiconductor and Storage
Series
STripFET™ IIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 1.5A, 10V3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V9 nC @ 5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V340 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)3.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-223USM
Package / Case
SC-70, SOT-323TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
STN3NF06L
MOSFET N-CH 60V 4A SOT223
STMicroelectronics
76,622
In Stock
1 : ¥7.31000
Cut Tape (CT)
4,000 : ¥3.02542
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Tc)
5V, 10V
100mOhm @ 1.5A, 10V
2.8V @ 250µA
9 nC @ 5 V
±16V
340 pF @ 25 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
51,015
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.24805
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
170mA (Ta)
4.5V, 10V
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
USM
SC-70, SOT-323
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.