Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedTexas InstrumentsToshiba Semiconductor and Storage
Series
-FemtoFET™U-MOSIIIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)330mA (Ta)350mA (Ta)2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 8V2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
64mOhm @ 500mA, 8V1.31Ohm @ 100mA, 4.5V1.5Ohm @ 100mA, 10V2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA1.2V @ 250µA1.5V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V0.9 nC @ 10 V1.2 nC @ 4 V2.7 nC @ 4.5 V
Vgs (Max)
±8V10V±20V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V40 pF @ 10 V43 pF @ 10 V347 pF @ 15 V
Power Dissipation (Max)
150mW (Ta)350mW (Ta)500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
3-PICOSTARSOT-23-3SSM
Package / Case
3-XFDFNSC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
416,802
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
2.5V, 10V
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.9 nC @ 10 V
±20V
23.2 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
461,815
In Stock
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.27694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
330mA (Ta)
1.5V, 4.5V
1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.2 nC @ 4 V
±8V
43 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
110,434
In Stock
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.29446
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
150mW (Ta)
150°C
Surface Mount
SSM
SC-75, SOT-416
CSDxxxxF4T
CSD17382F4T
MOSFET N-CH 30V 2.3A 3PICOSTAR
Texas Instruments
5,472
In Stock
1 : ¥6.98000
Cut Tape (CT)
250 : ¥4.39816
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.3A (Ta)
1.8V, 8V
64mOhm @ 500mA, 8V
1.2V @ 250µA
2.7 nC @ 4.5 V
10V
347 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.