Single FETs, MOSFETs

Results: 9
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiTexas InstrumentsVishay Siliconix
Series
-NexFET™OptiMOS™ 5TrenchFET®TrenchFET® Gen IIITrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V50 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)310mA (Ta)10.6A (Ta), 87A (Tc)17A (Ta), 86A (Tc)24A (Ta), 81.2A (Tc)28A (Tc)31A (Ta), 100A (Tc)40A (Tc)50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 20A, 10V4.2mOhm @ 10A, 10V4.5mOhm @ 20A, 10V7mOhm @ 20A, 10V10mOhm @ 20A, 10V14.5mOhm @ 10A, 10V25mOhm @ 10.2A, 10V3Ohm @ 115mA, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA2V @ 250µA2.3V @ 250µA2.3V @ 26µA2.3V @ 36µA2.4V @ 250µA3V @ 250µA3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 10 V5 nC @ 4.5 V21 nC @ 10 V33.5 nC @ 10 V39 nC @ 10 V41 nC @ 10 V160 nC @ 10 V330 nC @ 10 V
Vgs (Max)
±16V+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V50 pF @ 25 V1680 pF @ 50 V1925 pF @ 30 V2000 pF @ 20 V2340 pF @ 40 V2500 pF @ 30 V4700 pF @ 40 V12900 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)370mW (Ta)2.3W (Ta)2.5W (Ta), 65W (Tc)2.8W (Ta), 83W (Tc)4.1W (Ta), 46.2W (Tc)5.2W (Ta), 83.3W (Tc)6.25W (Ta), 104W (Tc)69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)PG-TSDSON-8-25PG-TSDSON-8-FLPowerDI5060-8PowerPAK® SO-8SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
92,761
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
CSD19537Q3
CSD19537Q3
MOSFET N-CH 100V 9.7A/50A 8VSON
Texas Instruments
4,879
In Stock
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.07443
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
6V, 10V
14.5mOhm @ 10A, 10V
3.6V @ 250µA
21 nC @ 10 V
±20V
1680 pF @ 50 V
-
2.8W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
TSDSON-8
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
Infineon Technologies
2,021
In Stock
1 : ¥12.31000
Cut Tape (CT)
5,000 : ¥5.34928
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
4.5V, 10V
7mOhm @ 20A, 10V
2.3V @ 36µA
5 nC @ 4.5 V
±20V
2340 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
PowerPAK SO-8
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
Vishay Siliconix
27,156
In Stock
1 : ¥16.34000
Cut Tape (CT)
3,000 : ¥7.37016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 100A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
2.3V @ 250µA
330 nC @ 10 V
±20V
12900 pF @ 20 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SO-8
SI7469DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8
Vishay Siliconix
22,026
In Stock
1 : ¥21.02000
Cut Tape (CT)
3,000 : ¥9.48427
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
28A (Tc)
4.5V, 10V
25mOhm @ 10.2A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4700 pF @ 40 V
-
5.2W (Ta), 83.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT-23-3
DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
378,326
In Stock
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.23992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SIRA74DP-T1-GE3
MOSFET N-CH 40V 24A/81.2A PPAK
Vishay Siliconix
14,207
In Stock
1 : ¥8.05000
Cut Tape (CT)
3,000 : ¥3.31517
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 81.2A (Tc)
4.5V, 10V
4.2mOhm @ 10A, 10V
2.4V @ 250µA
41 nC @ 10 V
+20V, -16V
2000 pF @ 20 V
-
4.1W (Ta), 46.2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DMPH4015SPSQ-13
DMT6009LPS-13
MOSFET N-CHA 60V 10.6A POWERDI
Diodes Incorporated
3,226
In Stock
1 : ¥8.37000
Cut Tape (CT)
2,500 : ¥3.45942
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10.6A (Ta), 87A (Tc)
4.5V, 10V
10mOhm @ 20A, 10V
2V @ 250µA
33.5 nC @ 10 V
±16V
1925 pF @ 30 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8
8-PowerTDFN
ISZ0702NLSATMA1
ISZ0702NLSATMA1
MOSFET N-CH 60V 17A/86A TSDSON
Infineon Technologies
7,870
In Stock
1 : ¥10.26000
Cut Tape (CT)
5,000 : ¥3.83398
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 86A (Tc)
4.5V, 10V
4.5mOhm @ 20A, 10V
2.3V @ 26µA
39 nC @ 10 V
±20V
2500 pF @ 30 V
-
2.5W (Ta), 65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-25
8-PowerTDFN
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.