Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002 MOSFET SOT23 N 60V 5OHM 150C onsemi	80,287 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.98624 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
AOT9N50 MOSFET N-CH 500V 9A TO220 Alpha & Omega Semiconductor Inc.	13,711 In Stock	1 : ¥11.00000 Tube	-	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	9A (Tc)	10V	850mOhm @ 4.5A, 10V	4.5V @ 250µA	28 nC @ 10 V	±30V	1042 pF @ 25 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFP064NPBF MOSFET N-CH 55V 110A TO247AC Infineon Technologies	2 In Stock	1 : ¥22.49000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	4000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.