Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQ2364EES-T1_GE3 MOSFET N-CH 60V 2A SOT23-3 Vishay Siliconix	24,544 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.77589 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Tc)	1.5V, 4.5V	240mOhm @ 2A, 4.5V	1V @ 250µA	2.5 nC @ 4.5 V	±8V	330 pF @ 25 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
TPN11006PL,LQ MOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage	33,829 In Stock	1 : ¥8.05000 Cut Tape (CT) 3,000 : ¥1.98420 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	26A (Tc)	4.5V, 10V	11.4mOhm @ 13A, 10V	2.5V @ 200µA	17 nC @ 10 V	±20V	1625 pF @ 30 V	-	610mW (Ta), 61W (Tc)	175°C	-	-	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.