Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN3404L-7 MOSFET N-CH 30V 5.8A SOT23-3 Diodes Incorporated	3,329 In Stock 4,086,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.58071 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.8A (Ta)	3V, 10V	28mOhm @ 5.8A, 10V	2V @ 250µA	9.2 nC @ 10 V	±20V	386 pF @ 15 V	-	720mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3J132TU,LF MOSFET P-CH 12V 5.4A UFM Toshiba Semiconductor and Storage	4,544 In Stock	1 : ¥6.16000 Cut Tape (CT) 3,000 : ¥1.46129 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	5.4A (Ta)	1.2V, 4.5V	17mOhm @ 5A, 4.5V	1V @ 1mA	33 nC @ 4.5 V	±6V	2700 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
NVMJS1D6N06CLTWG MOSFET N-CH 60V 38A/250A 8LFPAK onsemi	8,090 In Stock	1 : ¥22.41000 Cut Tape (CT) 3,000 : ¥10.11951 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	38A (Ta), 250A (Tc)	4.5V, 10V	1.36mOhm @ 50A, 10V	2V @ 250µA	91 nC @ 10 V	±20V	6660 pF @ 25 V	-	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.