Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.onsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)21A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 20A, 10V115mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V70 nC @ 10 V
Vgs (Max)
±8V±25V
Input Capacitance (Ciss) (Max) @ Vds
451 pF @ 10 V2830 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)5W (Ta), 30W (Tc)
Supplier Device Package
8-DFN-EP (3x3)SOT-23-3
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
onsemi
46,245
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.6A (Ta)
2.5V, 4.5V
115mOhm @ 1.6A, 4.5V
1.5V @ 250µA
6.2 nC @ 4.5 V
±8V
451 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-DFN
AONR21357
MOSFET P-CH 30V 21A/34A 8DFN
Alpha & Omega Semiconductor Inc.
17,137
In Stock
1 : ¥5.50000
Cut Tape (CT)
5,000 : ¥1.99255
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 34A (Tc)
4.5V, 10V
7.8mOhm @ 20A, 10V
2.3V @ 250µA
70 nC @ 10 V
±25V
2830 pF @ 15 V
-
5W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.