Single FETs, MOSFETs

Results: 3
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®TrenchFET® Gen IVU-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta), 13A (Tc)26A (Tc)30.7A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
2.88mOhm @ 20A, 10V7.5mOhm @ 13A, 10V89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 250µA4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V30 nC @ 10 V83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
833 pF @ 20 V1800 pF @ 30 V4415 pF @ 40 V
Power Dissipation (Max)
700mW (Ta), 42W (Tc)2W (Ta), 4.2W (Tc)6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-TSOP8-TSON Advance (3.1x3.1)PowerPAK® SO-8
Package / Case
8-PowerVDFNPowerPAK® SO-8SOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Pkg 5540
SI3127DV-T1-GE3
MOSFET P-CH 60V 3.5A/13A 6TSOP
Vishay Siliconix
1,176
In Stock
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥1.41691
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta), 13A (Tc)
4.5V, 10V
89mOhm @ 1.5A, 4.5V
3V @ 250µA
30 nC @ 10 V
±20V
833 pF @ 20 V
-
2W (Ta), 4.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
7,370
In Stock
1 : ¥12.40000
Cut Tape (CT)
5,000 : ¥3.11211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
6.5V, 10V
7.5mOhm @ 13A, 10V
4V @ 200µA
22 nC @ 10 V
±20V
1800 pF @ 30 V
-
700mW (Ta), 42W (Tc)
150°C (TJ)
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
PowerPAK SO-8
SIR680ADP-T1-RE3
MOSFET N-CH 80V 30.7A/125A PPAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥18.47000
Cut Tape (CT)
3,000 : ¥8.31498
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
30.7A (Ta), 125A (Tc)
7.5V, 10V
2.88mOhm @ 20A, 10V
3.5V @ 250µA
83 nC @ 10 V
±20V
4415 pF @ 40 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.