Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
-HEXFET®SIPMOS®TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
330mA (Ta)360mA (Ta)2.8A (Tc)3A (Ta)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
20mOhm @ 42A, 10V120mOhm @ 1.5A, 5V177mOhm @ 2.4A, 10V1.6Ohm @ 300mA, 10V2Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 250µA2V @ 80µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V3.57 nC @ 10 V12 nC @ 10 V15 nC @ 5 V180 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V78 pF @ 25 V440 pF @ 25 V550 pF @ 30 V3500 pF @ 25 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)360mW (Ta)1.3W (Ta)2W (Tc)170W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKPG-SOT23SOT-223 (TO-261)TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
838,901
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.33411
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
Infineon Technologies
111,248
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.78379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
330mA (Ta)
4.5V, 10V
2Ohm @ 330mA, 10V
2V @ 80µA
3.57 nC @ 10 V
±20V
78 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF4905STRLPBF
MOSFET P-CH 55V 42A D2PAK
Infineon Technologies
8,124
In Stock
1 : ¥22.25000
Cut Tape (CT)
800 : ¥12.42841
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-223 (TO-261)
NVF3055L108T1G
MOSFET N-CH 60V 3A SOT223
onsemi
38,134
In Stock
1 : ¥7.64000
Cut Tape (CT)
1,000 : ¥3.33770
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
5V
120mOhm @ 1.5A, 5V
2V @ 250µA
15 nC @ 5 V
±15V
440 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
SOT-23-3
SQ2361ES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23
Vishay Siliconix
149,083
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥1.88700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
60 V
2.8A (Tc)
10V
177mOhm @ 2.4A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
550 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
-
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.