Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
330mOhm @ 3A, 10V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V350 pF @ 25 V
Power Dissipation (Max)
625mW (Ta)850mW (Ta)
Supplier Device Package
TO-92TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3 Formed Leads
BS270-D74Z
MOSFET N-CH 60V 400MA TO92-3
onsemi
8,550
In Stock
80,000
Factory
1 : ¥3.28000
Cut Tape (CT)
2,000 : ¥0.89672
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 250µA
±20V
50 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306AV
ZVN4306AV
MOSFET N-CH 60V 1.1A TO92-3
Diodes Incorporated
1,081
In Stock
1 : ¥12.73000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.1A (Ta)
5V, 10V
330mOhm @ 3A, 10V
3V @ 1mA
±20V
350 pF @ 25 V
-
850mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.