Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IPD78CN10NGATMA1 MOSFET N-CH 100V 13A TO252-3 Infineon Technologies	13,744 In Stock	1 : ¥6.24000 Cut Tape (CT) 2,500 : ¥2.37382 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	78mOhm @ 13A, 10V	4V @ 12µA	11 nC @ 10 V	±20V	716 pF @ 50 V	-	31W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLL024NTRPBF MOSFET N-CH 55V 3.1A SOT223 Infineon Technologies	96,499 In Stock	1 : ¥6.73000 Cut Tape (CT) 2,500 : ¥2.55226 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	3.1A (Ta)	4V, 10V	65mOhm @ 3.1A, 10V	2V @ 250µA	15.6 nC @ 5 V	±16V	510 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
SQS460ENW-T1_GE3 MOSFET N-CH 60V 8A PPAK1212-8W Vishay Siliconix	6,775 In Stock	1 : ¥7.06000 Cut Tape (CT) 3,000 : ¥2.91336 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	36mOhm @ 5.3A, 10V	2.5V @ 250µA	20 nC @ 10 V	±20V	755 pF @ 25 V	-	39W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.