Single FETs, MOSFETs

Results: 10
Manufacturer
Diodes IncorporatedEPCInfineon TechnologiesonsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-eGaN®OptiMOS™PowerTrench®TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V25 V30 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)2.3A (Ta)3.4A (Ta)7.6A (Tc)18A (Ta), 40A (Tc)19A (Ta), 40A (Tc)29A (Ta)30A (Ta), 100A (Tc)100A (Tc)145A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V1.8V, 4V4.5V, 10V5V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 50A, 10V2mOhm @ 50A, 10V3.1mOhm @ 20A, 10V3.9mOhm @ 20A, 10V5.2mOhm @ 50A, 10V6mOhm @ 16A, 5V29mOhm @ 5.4A, 10V59mOhm @ 3A, 4.5V85mOhm @ 1.5A, 4V100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 1mA2V @ 250µA2.5V @ 250µA2.5V @ 4mA2.8V @ 95µA3V @ 250µA3.3V @ 36µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V10.4 nC @ 4.5 V18.3 nC @ 10 V34 nC @ 10 V36 nC @ 10 V71 nC @ 10 V116 nC @ 10 V130.8 nC @ 10 V
Vgs (Max)
+6V, -4V±8V±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V627 pF @ 10 V630 pF @ 10 V851 pF @ 50 V1230 pF @ 12 V1295 pF @ 15 V2500 pF @ 30 V5200 pF @ 30 V6195 pF @ 25 V6555 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)500mW (Ta)1.25W (Ta), 2.5W (Tc)2.1W (Ta), 30W (Tc)2.1W (Ta), 69W (Tc)2.5W (Ta), 139W (Tc)153W (Tc)167W-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DieES6PG-TDSON-8 FLPG-TSDSON-8-34PG-TSDSON-8-FLPowerDI5060-8 (Type K)SOT-23-3 (TO-236)SOT-323TO-252AA
Package / Case
8-PowerTDFN8-PowerVDFNDieSC-70, SOT-323SOT-563, SOT-666TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
DMP2160UW-7
MOSFET P-CH 20V 1.5A SOT-323
Diodes Incorporated
64,007
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
100mOhm @ 1.5A, 4.5V
900mV @ 250µA
-
±12V
627 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
SI2369DS-T1-GE3
MOSFET P-CH 30V 7.6A TO236
Vishay Siliconix
33,166
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.10687
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7.6A (Tc)
4.5V, 10V
29mOhm @ 5.4A, 10V
2.5V @ 250µA
36 nC @ 10 V
±20V
1295 pF @ 15 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerDI5060-8
DMTH6002LPS-13
MOSFET N-CH 60V 100A PWRDI5060-8
Diodes Incorporated
5,707
In Stock
1 : ¥13.46000
Cut Tape (CT)
2,500 : ¥6.06301
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
6V, 10V
2mOhm @ 50A, 10V
3V @ 250µA
130.8 nC @ 10 V
±20V
6555 pF @ 30 V
-
167W
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
TO-252AA
FDD8444
MOSFET N-CH 40V 145A TO252AA
onsemi
4,800
In Stock
1 : ¥17.98000
Cut Tape (CT)
2,500 : ¥8.11897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
145A (Tc)
10V
5.2mOhm @ 50A, 10V
4V @ 250µA
116 nC @ 10 V
±20V
6195 pF @ 25 V
-
153W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-PowerTDFN
BSC016N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON
Infineon Technologies
24,128
In Stock
1 : ¥20.77000
Cut Tape (CT)
5,000 : ¥9.02266
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Ta), 100A (Tc)
6V, 10V
1.6mOhm @ 50A, 10V
2.8V @ 95µA
71 nC @ 10 V
±20V
5200 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
TSDSON-8
BSZ031NE2LS5ATMA1
MOSFET N-CH 25V 19A/40A TSDSON
Infineon Technologies
7,050
In Stock
1 : ¥8.70000
Cut Tape (CT)
5,000 : ¥3.42787
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
19A (Ta), 40A (Tc)
4.5V, 10V
3.1mOhm @ 20A, 10V
2V @ 250µA
18.3 nC @ 10 V
±16V
1230 pF @ 12 V
-
2.1W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
17,578
In Stock
1 : ¥5.75000
Cut Tape (CT)
4,000 : ¥1.28200
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
2.3A (Ta)
1.8V, 4V
85mOhm @ 1.5A, 4V
1V @ 1mA
-
±12V
270 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
TSDSON-8
BSZ039N06NSATMA1
MOSFET N-CH 60V 18A/40A TSDSON
Infineon Technologies
2,686
In Stock
1 : ¥13.79000
Cut Tape (CT)
5,000 : ¥5.23400
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 40A (Tc)
6V, 10V
3.9mOhm @ 20A, 10V
3.3V @ 36µA
34 nC @ 10 V
±20V
2500 pF @ 30 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-34
8-PowerVDFN
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
0
In Stock
Check Lead Time
1 : ¥19.79000
Cut Tape (CT)
2,500 : ¥8.93286
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
0
In Stock
Check Lead Time
1 : ¥4.27000
Cut Tape (CT)
4,000 : ¥0.92284
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
1.5V, 4.5V
59mOhm @ 3A, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.