Single FETs, MOSFETs

Results: 2

Filters

Stacked

Scrolling

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SPW47N60C3FKSA1 MOSFET N-CH 650V 47A TO247-3 Infineon Technologies	1,197 In Stock	1 : ¥125.61000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	320 nC @ 10 V	±20V	6800 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
TK10E60W,S1VX MOSFET N-CH 600V 9.7A TO220 Toshiba Semiconductor and Storage	71 In Stock	1 : ¥32.43000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	100W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3

Showing

of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.