Single FETs, MOSFETs

Results: 23
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
-HEXFET®OptiMOS™OptiMOS™ 5OptiMOS™-5U-MOSVIII-HUniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time BuyObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V80 V100 V120 V200 V220 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)1A (Ta), 7A (Tc)1.6A (Ta)5A (Ta), 12.5A (Tc)5.3A (Ta), 18A (Tc)7A (Ta), 23A (Tc)8A (Ta), 40A (Tc)8.8A (Ta), 42A (Tc)9.4A (Tc)12A (Ta), 40A (Tc)13.4A (Ta), 98A (Tc)13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 20A, 10V2.4mOhm @ 165A, 10V4.1mOhm @ 90A, 10V6mOhm @ 50A, 10V6.5mOhm @ 20A, 10V7.7mOhm @ 50A, 10V8.6mOhm @ 20A, 10V10.9mOhm @ 46A, 10V11mOhm @ 20A, 10V15mOhm @ 20A, 10V16mOhm @ 20A, 10V16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
1.8V @ 13µA2V @ 250µA2V @ 253µA2.1V @ 33µA2.2V @ 12µA2.5V @ 250µA2.5V @ 25µA2.8V @ 250µA3.1V @ 105µA3.5V @ 12µA3.5V @ 33µA3.5V @ 45µA3.5V @ 90µA4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 10 V2.5 nC @ 4.5 V9.1 nC @ 10 V10 nC @ 10 V10.8 nC @ 10 V11 nC @ 10 V11.6 nC @ 10 V11.9 nC @ 10 V12 nC @ 10 V18 nC @ 10 V25 nC @ 10 V33 nC @ 10 V35 nC @ 10 V44 nC @ 10 V
Vgs (Max)
+5V, -16V±16V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
20.9 pF @ 25 V290 pF @ 25 V415 pF @ 50 V670 pF @ 15 V670 pF @ 50 V683 pF @ 50 V756 pF @ 40 V810 pF @ 50 V880 pF @ 50 V920 pF @ 100 V1180 pF @ 100 V1700 pF @ 50 V
Power Dissipation (Max)
500mW (Ta)700mW (Ta), 27W (Tc)1.3W (Ta)2.1W (Ta), 26W (Tc)2.1W (Ta), 42W (Tc)2.1W (Ta), 50W (Tc)2.1W (Ta), 63W (Tc)2.1W (Ta), 69W (Tc)2.5W (Ta), 32W (Tc)3.1W (Ta), 20.8W (Tc)3.4W (Ta), 68W (Tc)29W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-DFN-EP (3x3)8-MLP (3.3x3.3)8-TSON Advance (3.3x3.3)D2PAKMicro3™/SOT-23PG-SOT23PG-TDSON-8-1PG-TDSON-8-33PG-TDSON-8-5PG-TO252-3-11PG-TSDSON-8PG-TSDSON-8-FLPowerDI5060-8 (Type UX)TO-220AB
Package / Case
8-PowerTDFN8-PowerVDFN8-PowerWDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0100TRPBF
MOSFET N-CH 100V 1.6A SOT23
Infineon Technologies
31,834
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16186
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
8-DFN
AON7296
MOSFET N-CH 100V 5A/12.5A 8DFN
Alpha & Omega Semiconductor Inc.
103,385
In Stock
1 : ¥5.01000
Cut Tape (CT)
5,000 : ¥1.81338
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5A (Ta), 12.5A (Tc)
4.5V, 10V
66mOhm @ 5A, 10V
2.8V @ 250µA
12 nC @ 10 V
±20V
415 pF @ 50 V
-
3.1W (Ta), 20.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
TSDSON-8
BSZ065N03LSATMA1
MOSFET N-CH 30V 12A/40A TSDSON
Infineon Technologies
20,776
In Stock
1 : ¥6.81000
Cut Tape (CT)
5,000 : ¥2.45812
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta), 40A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2V @ 250µA
10 nC @ 10 V
±20V
670 pF @ 15 V
-
2.1W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
PG-TSDSON-8-34
BSZ110N06NS3GATMA1
MOSFET N-CH 60V 20A 8TSDSON
Infineon Technologies
9,350
In Stock
1 : ¥7.06000
Cut Tape (CT)
5,000 : ¥2.78209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
20A (Tc)
10V
11mOhm @ 20A, 10V
4V @ 23µA
33 nC @ 10 V
±20V
2700 pF @ 30 V
-
2.1W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8
8-PowerVDFN
8-Power TDFN
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
Infineon Technologies
11,627
In Stock
1 : ¥7.22000
Cut Tape (CT)
5,000 : ¥2.60588
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta), 40A (Tc)
6V, 10V
8.6mOhm @ 20A, 10V
3.1V @ 105µA
57.5 nC @ 10 V
±25V
4785 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-Power TDFN
BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5
Infineon Technologies
90,745
In Stock
1 : ¥7.31000
Cut Tape (CT)
5,000 : ¥2.62604
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
7A (Ta), 23A (Tc)
6V, 10V
34mOhm @ 12A, 10V
3.5V @ 12µA
9.1 nC @ 10 V
±20V
756 pF @ 40 V
-
2.5W (Ta), 32W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
PG-TDSON-8-33
IAUC24N10S5L300ATMA1
MOSFET N-CH 100V 24A TDSON-8-33
Infineon Technologies
14,493
In Stock
1 : ¥7.88000
Cut Tape (CT)
5,000 : ¥3.09144
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
24A (Tc)
4.5V, 10V
30mOhm @ 12A, 10V
2.2V @ 12µA
11 nC @ 10 V
±20V
670 pF @ 50 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
41,640
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.04029
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
16mOhm @ 20A, 10V
3.5V @ 12µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PG-TDSON-8-1
BSC160N10NS3GATMA1
MOSFET N-CH 100V 8.8A/42A TDSON
Infineon Technologies
22,425
In Stock
1 : ¥12.89000
Cut Tape (CT)
5,000 : ¥5.07372
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.8A (Ta), 42A (Tc)
6V, 10V
16mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
BSZ900N20NS3GATMA1
MOSFET N-CH 200V 15.2A 8TSDSON
Infineon Technologies
43,549
In Stock
1 : ¥13.38000
Cut Tape (CT)
5,000 : ¥5.81501
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
15.2A (Tc)
10V
90mOhm @ 7.6A, 10V
4V @ 30µA
11.6 nC @ 10 V
±20V
920 pF @ 100 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PG-TDSON-8-1
BSC109N10NS3GATMA1
MOSFET N-CH 100V 63A TDSON-8-1
Infineon Technologies
30,979
In Stock
1 : ¥13.63000
Cut Tape (CT)
5,000 : ¥5.37122
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
63A (Tc)
6V, 10V
10.9mOhm @ 46A, 10V
3.5V @ 45µA
35 nC @ 10 V
±20V
2500 pF @ 50 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
PG-TDSON-8-1
BSC060N10NS3GATMA1
MOSFET N-CH 100V 14.9/90A 8TDSON
Infineon Technologies
17,142
In Stock
1 : ¥20.28000
Cut Tape (CT)
5,000 : ¥8.81537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14.9A (Ta), 90A (Tc)
6V, 10V
6mOhm @ 50A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4900 pF @ 50 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
PG-TDSON-8-1
BSC077N12NS3GATMA1
MOSFET N-CH 120V 13.4/98A 8TDSON
Infineon Technologies
17,874
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥10.26394
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
13.4A (Ta), 98A (Tc)
10V
7.7mOhm @ 50A, 10V
4V @ 110µA
88 nC @ 10 V
±20V
5700 pF @ 60 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLS3036TRLPBF
MOSFET N-CH 60V 195A D2PAK
Infineon Technologies
1,992
In Stock
1 : ¥30.05000
Cut Tape (CT)
800 : ¥18.12475
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140 nC @ 4.5 V
±16V
11210 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-23-3
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
225,911
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.45903
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
1.8V @ 13µA
0.9 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TDSON
Infineon Technologies
7,313
In Stock
1 : ¥6.90000
Cut Tape (CT)
5,000 : ¥2.47492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5.3A (Ta), 18A (Tc)
6V, 10V
44mOhm @ 12A, 10V
3.5V @ 12µA
10.8 nC @ 10 V
±20V
810 pF @ 50 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TSDSON-8
BSZ019N03LSATMA1
MOSFET N-CH 30V 22A . 40A TSDSON
Infineon Technologies
88,375
In Stock
1 : ¥9.28000
Cut Tape (CT)
5,000 : ¥5.52295
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta). 40A (Tc)
4.5V, 10V
1.9mOhm @ 20A, 10V
2V @ 250µA
44 nC @ 10 V
±20V
2800 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-Power TDFN
BSZ150N10LS3GATMA1
MOSFET N-CH 100V 40A 8TSDSON
Infineon Technologies
7,081
In Stock
1 : ¥12.48000
Cut Tape (CT)
5,000 : ¥5.42337
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
15mOhm @ 20A, 10V
2.1V @ 33µA
35 nC @ 10 V
±20V
2500 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8
8-PowerTDFN
13,556
In Stock
1 : ¥11.33000
Cut Tape (CT)
3,000 : ¥2.94333
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
9.4A (Tc)
10V
33mOhm @ 4.7A, 10V
4V @ 100µA
11 nC @ 10 V
±20V
880 pF @ 50 V
-
700mW (Ta), 27W (Tc)
150°C (TJ)
-
-
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
PowerDI5060 UX
DMTH10H032LPSW-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
1,470
In Stock
10,000
Factory
1 : ¥4.68000
Cut Tape (CT)
2,500 : ¥1.78961
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
4.5V, 10V
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9 nC @ 10 V
±20V
683 pF @ 50 V
-
3.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
8-MLP, Power33
FDMC2674
MOSFET N-CH 220V 1A/7A 8MLP
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
220 V
1A (Ta), 7A (Tc)
10V
366mOhm @ 1A, 10V
4V @ 250µA
18 nC @ 10 V
±20V
1180 pF @ 100 V
-
2.1W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
TO-220AB PKG
IRL2910PBF
MOSFET N-CH 100V 55A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
55A (Tc)
4V, 10V
26mOhm @ 29A, 10V
2V @ 250µA
140 nC @ 5 V
±16V
3700 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO252-3
IPD90P03P4L04ATMA1
MOSFET P-CH 30V 90A TO252-3
Infineon Technologies
0
In Stock
Last Time Buy
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
30 V
90A (Tc)
4.5V, 10V
4.1mOhm @ 90A, 10V
2V @ 253µA
160 nC @ 10 V
+5V, -16V
11300 pF @ 25 V
-
137W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 23

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.