Single FETs, MOSFETs

Results: 8
Manufacturer
IXYSLittelfuse Inc.
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
100 V500 V1000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)6A (Tc)10A (Tc)16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V10V-
Rds On (Max) @ Id, Vgs
64mOhm @ 8A, 0V240mOhm @ 8A, 0V500mOhm @ 3A, 0V1.5Ohm @ 5A, 10V2.2Ohm @ 3A, 0V5.5Ohm @ 1.5A, 0V
Gate Charge (Qg) (Max) @ Vgs
37.5 nC @ 5 V95 nC @ 5 V96 nC @ 5 V199 nC @ 5 V200 nC @ 5 V225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 25 V2650 pF @ 25 V2800 pF @ 25 V5250 pF @ 25 V5320 pF @ 25 V5700 pF @ 25 V
Power Dissipation (Max)
125W (Tc)300W (Tc)695W (Tc)830W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220-3TO-247 (IXTH)TO-263AATO-268AA
Package / Case
TO-220-3TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
8Results
Showing
of 8
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-AD-EP-(H)
IXTH10N100D2
MOSFET N-CH 1000V 10A TO247
Littelfuse Inc.
472
In Stock
1 : ¥166.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
10A (Tc)
10V
1.5Ohm @ 5A, 10V
-
200 nC @ 5 V
±20V
5320 pF @ 25 V
Depletion Mode
695W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-247-AD-EP-(H)
IXTH6N100D2
MOSFET N-CH 1000V 6A TO247
Littelfuse Inc.
504
In Stock
1 : ¥88.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
6A (Tc)
-
2.2Ohm @ 3A, 0V
-
95 nC @ 5 V
±20V
2650 pF @ 25 V
Depletion Mode
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-263AB
IXTA3N100D2
MOSFET N-CH 1000V 3A TO263
Littelfuse Inc.
406
In Stock
1 : ¥50.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
3A (Tc)
-
5.5Ohm @ 1.5A, 0V
-
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
Depletion Mode
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IXTP6N100D2
MOSFET N-CH 1000V 6A TO220AB
Littelfuse Inc.
300
In Stock
1 : ¥75.45000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
6A (Tc)
-
2.2Ohm @ 3A, 0V
-
95 nC @ 5 V
±20V
2650 pF @ 25 V
Depletion Mode
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-247-AD-EP-(H)
IXTH6N50D2
MOSFET N-CH 500V 6A TO247
Littelfuse Inc.
270
In Stock
1 : ¥88.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
6A (Tc)
-
500mOhm @ 3A, 0V
-
96 nC @ 5 V
±20V
2800 pF @ 25 V
Depletion Mode
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-220-3
IXTP3N100D2
MOSFET N-CH 1000V 3A TO220AB
Littelfuse Inc.
52
In Stock
1 : ¥36.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
3A (Tc)
-
5.5Ohm @ 1.5A, 0V
-
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
Depletion Mode
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-268
IXTT16N50D2
MOSFET N-CH 500V 16A TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥169.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
16A (Tc)
0V
240mOhm @ 8A, 0V
-
199 nC @ 5 V
±20V
5250 pF @ 25 V
Depletion Mode
695W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-AD-EP-(H)
IXTH16N10D2
MOSFET N-CH 100V 16A TO247
IXYS
0
In Stock
300 : ¥102.37873
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
16A (Tc)
0V
64mOhm @ 8A, 0V
-
225 nC @ 5 V
±20V
5700 pF @ 25 V
Depletion Mode
830W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
Showing
of 8

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.