Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS123L MOSFET N-CH 100V 170MA SOT23-3 onsemi	115,379 In Stock	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.41966 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2V @ 1mA	2.5 nC @ 10 V	±20V	21.5 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STL220N6F7 MOSFET N-CH 60V 120A POWERFLAT STMicroelectronics	4,917 In Stock	1 : ¥23.07000 Cut Tape (CT) 3,000 : ¥10.41066 Tape & Reel (TR)	STripFET™ F7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	1.4mOhm @ 20A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	6600 pF @ 25 V	-	4.8W (Ta), 187W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
STL160N4F7 MOSFET N-CH 40V 120A POWERFLAT STMicroelectronics	0 In Stock Check Lead Time	1 : ¥12.40000 Cut Tape (CT) 3,000 : ¥5.57257 Tape & Reel (TR)	STripFET™ F7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V	2.5mOhm @ 16A, 10V	4V @ 250µA	29 nC @ 10 V	±20V	2300 pF @ 25 V	-	111W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.