Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NX3008NBKW,115 MOSFET N-CH 30V 350MA SOT323 Nexperia USA Inc.	634,610 In Stock	1 : ¥2.05000 Cut Tape (CT) 3,000 : ¥0.33879 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	350mA (Ta)	1.8V, 4.5V	1.4Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.68 nC @ 4.5 V	±8V	50 pF @ 15 V	-	260mW (Ta), 830mW (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
SSM6J512NU,LF MOSFET P-CH 12V 10A 6UDFNB Toshiba Semiconductor and Storage	2,011 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥1.09803 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	10A (Ta)	1.8V, 8V	16.2mOhm @ 4A, 8V	1V @ 1mA	19.5 nC @ 4.5 V	±10V	1400 pF @ 6 V	-	1.25W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
PMPB12R5EPX PMPB12R5EP - 30 V, P-CHANNEL TRE Nexperia USA Inc.	0 In Stock	Obsolete	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	8.8A (Ta)	4.5V, 10V	15mOhm @ 8.8A, 10V	2V @ 250µA	44 nC @ 10 V	±20V	1392 pF @ 15 V	-	1.9W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.