Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiTexas Instruments
Series
NexFET™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta), 20A (Tc)60A (Ta)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 25A, 10V10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V91 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
3970 pF @ 15 V4420 pF @ 15 V
Power Dissipation (Max)
2.3W (Ta), 41W (Tc)2.8W (Ta), 108W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)8-VSON-CLIP (3.3x3.3)
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD17575Q3
MOSFET N-CH 30V 60A 8VSON
Texas Instruments
54,152
In Stock
1 : ¥6.16000
Cut Tape (CT)
2,500 : ¥3.27343
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
60A (Ta)
4.5V, 10V
2.3mOhm @ 25A, 10V
1.8V @ 250µA
30 nC @ 4.5 V
±20V
4420 pF @ 15 V
-
2.8W (Ta), 108W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
8-MLP, Power33
FDMC6679AZ
MOSFET P-CH 30V 11.5A/20A 8MLP
onsemi
2,945
In Stock
1 : ¥11.25000
Cut Tape (CT)
3,000 : ¥4.48724
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
11.5A (Ta), 20A (Tc)
4.5V, 10V
10mOhm @ 11.5A, 10V
3V @ 250µA
91 nC @ 10 V
±25V
3970 pF @ 15 V
-
2.3W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.