Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQ1431EH-T1_GE3 MOSFET P-CH 30V 3A SC70-6 Vishay Siliconix	17,748 In Stock	1 : ¥4.76000 Cut Tape (CT) 3,000 : ¥1.59853 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3A (Tc)	4.5V, 10V	175mOhm @ 2A, 10V	2V @ 250µA	6.5 nC @ 4.5 V	±20V	205 pF @ 25 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
ZXMN7A11GTA MOSFET N-CH 70V 2.7A SOT223 Diodes Incorporated	9,640 In Stock 21,000 Factory	1 : ¥6.73000 Cut Tape (CT) 1,000 : ¥2.88098 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	70 V	2.7A (Ta)	4.5V, 10V	130mOhm @ 4.4A, 10V	1V @ 250µA	7.4 nC @ 10 V	±20V	298 pF @ 40 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
BSS806NEH6327XTSA1 MOSFET N-CH 20V 2.3A SOT23-3 Infineon Technologies	64,061 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71245 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	2.3A (Ta)	1.8V, 2.5V	57mOhm @ 2.3A, 2.5V	750mV @ 11µA	1.7 nC @ 2.5 V	±8V	529 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
NVHL025N65S3 MOSFET N-CH 650V 75A TO247-3 onsemi	268 In Stock 1,800 Factory	1 : ¥171.75000 Tube	SuperFET® III	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	25mOhm @ 37.5A, 10V	4.5V @ 3mA	236 nC @ 10 V	±30V	7330 pF @ 400 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.