Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
-π-MOSV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
2A (Ta)15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V5V
Rds On (Max) @ Id, Vgs
150mOhm @ 7.5A, 5V300mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 10 V1190 pF @ 25 V
Power Dissipation (Max)
1W (Ta)65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
DPAKSOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DPAK_369C
NTD20P06LT4G
MOSFET P-CH 60V 15.5A DPAK
onsemi
7,385
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.65924
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
15.5A (Ta)
5V
150mOhm @ 7.5A, 5V
2V @ 250µA
26 nC @ 5 V
±20V
1190 pF @ 25 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
76,872
In Stock
1 : ¥5.75000
Cut Tape (CT)
3,000 : ¥1.33130
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
3.3V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
-
±20V
150 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.