Single FETs, MOSFETs

Results: 5
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon TechnologiesIXYSSTMicroelectronics
Series
-CoolMOS™HEXFET®MDmesh™PolarP2™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
100 V500 V600 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)6.8A (Tc)12A (Tc)16A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
90mOhm @ 9A, 10V280mOhm @ 2A, 10V330mOhm @ 8A, 10V350mOhm @ 6A, 10V520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 250µA4V @ 250µA4.5V @ 250µA5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 10 V31 nC @ 10 V37 nC @ 10 V39 nC @ 10 V43 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 50 V630 pF @ 100 V920 pF @ 25 V1000 pF @ 25 V2530 pF @ 25 V
Power Dissipation (Max)
1.2W (Ta)66W (Tc)70W (Tc)160W (Tc)300W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3-1SOT-23TO-220TO-220-3TO-220AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
36,313
In Stock
1 : ¥7.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
STP12NM50
MOSFET N-CH 500V 12A TO220AB
STMicroelectronics
651
In Stock
1 : ¥35.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
12A (Tc)
10V
350mOhm @ 6A, 10V
5V @ 50µA
39 nC @ 10 V
±30V
1000 pF @ 25 V
-
160W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AS2324
AS2324
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
29,160
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38299
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
280mOhm @ 2A, 10V
3V @ 250µA
5.3 nC @ 10 V
±20V
330 pF @ 50 V
-
1.2W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
MC78M05BTG
IPP60R520CP
N-CHANNEL POWER MOSFET
Infineon Technologies
500
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
600 V
6.8A (Tc)
10V
520mOhm @ 3.8A, 10V
3.5V @ 250µA
31 nC @ 10 V
±20V
630 pF @ 100 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
IXTP450P2
MOSFET N-CH 500V 16A TO220AB
IXYS
15
In Stock
1 : ¥37.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
16A (Tc)
10V
330mOhm @ 8A, 10V
4.5V @ 250µA
43 nC @ 10 V
±30V
2530 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.