Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V200 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
50mOhm @ 22A, 10V55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V15 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 10 V1580 pF @ 100 V
Power Dissipation (Max)
510mW (Ta)96W (Tc)
Supplier Device Package
PG-TDSON-8-1TO-236AB
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV48XP,215
MOSFET P-CH 20V 3.5A TO236AB
Nexperia USA Inc.
11,504
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43475
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
2.5V, 4.5V
55mOhm @ 2.4A, 4.5V
1.25V @ 250µA
11 nC @ 4.5 V
±12V
1000 pF @ 10 V
-
510mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC500N20NS3GATMA1
MOSFET N-CH 200V 24A TDSON-8
Infineon Technologies
5,330
In Stock
1 : ¥16.34000
Cut Tape (CT)
5,000 : ¥7.08885
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
24A (Tc)
10V
50mOhm @ 22A, 10V
4V @ 60µA
15 nC @ 10 V
±20V
1580 pF @ 100 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.