Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
HEXFET®OptiMOS™STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V75 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)64A (Tj)80A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V7.1mOhm @ 80A, 10V7.5mOhm @ 32A, 10V11mOhm @ 40A, 10V26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 30µA2.2V @ 196µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V140 nC @ 5 V160 nC @ 10 V166 nC @ 4.5 V180 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2106 pF @ 40 V3700 pF @ 25 V4700 pF @ 25 V28000 pF @ 30 V
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)75W (Tc)250W (Tc)300W (Tc)
Supplier Device Package
D2PAKPG-TDSON-8-33PG-TO263-3PG-TO263-3-2
Package / Case
8-PowerTDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL2910STRLPBF
MOSFET N-CH 100V 55A D2PAK
Infineon Technologies
7,706
In Stock
1 : ¥26.76000
Cut Tape (CT)
800 : ¥16.18125
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
55A (Tc)
4V, 10V
26mOhm @ 29A, 10V
2V @ 250µA
140 nC @ 5 V
±16V
3700 pF @ 25 V
-
3.8W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D²PAK
STB75NF75T4
MOSFET N-CH 75V 80A D2PAK
STMicroelectronics
1,912
In Stock
1 : ¥23.23000
Cut Tape (CT)
1,000 : ¥12.01150
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
80A (Tc)
10V
11mOhm @ 40A, 10V
4V @ 250µA
160 nC @ 10 V
±20V
3700 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB019N06L3GATMA1
MOSFET N-CH 60V 120A D2PAK
Infineon Technologies
7,726
In Stock
1 : ¥29.72000
Cut Tape (CT)
1,000 : ¥15.36369
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
120A (Tc)
4.5V, 10V
1.9mOhm @ 100A, 10V
2.2V @ 196µA
166 nC @ 4.5 V
±20V
28000 pF @ 30 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N08S207ATMA1
MOSFET N-CH 75V 80A TO263-3
Infineon Technologies
420
In Stock
1 : ¥38.75000
Cut Tape (CT)
1,000 : ¥20.04721
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
80A (Tc)
10V
7.1mOhm @ 80A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
4700 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MOSFET_(75V 120V( PG-TDSON-8
IAUC64N08S5L075ATMA1
MOSFET_(75V 120V( PG-TDSON-8
Infineon Technologies
4,330
In Stock
1 : ¥13.05000
Cut Tape (CT)
5,000 : ¥5.15240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
64A (Tj)
4.5V, 10V
7.5mOhm @ 32A, 10V
2V @ 30µA
37 nC @ 10 V
±20V
2106 pF @ 40 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.