Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon Technologiesonsemi
Series
CoolMOS™ C6CoolMOS™ C7OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V600 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)5A (Ta), 27A (Tc)13A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 40A, 10V52mOhm @ 5A, 10V185mOhm @ 5.3A, 10V3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA3.8V @ 50µA4V @ 250µA4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V16 nC @ 10 V24 nC @ 10 V38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V985 pF @ 75 V1080 pF @ 400 V2700 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)3.1W (Ta), 89W (Tc)18.1W (Tc)77W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-TDSON-8-7PG-TO252-3PG-VSON-4TO-252AA
Package / Case
4-PowerTSFN8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FDD86252
MOSFET N-CH 150V 5A/27A DPAK
onsemi
64,230
In Stock
1 : ¥8.62000
Cut Tape (CT)
2,500 : ¥4.60980
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
5A (Ta), 27A (Tc)
6V, 10V
52mOhm @ 5A, 10V
4V @ 250µA
16 nC @ 10 V
±20V
985 pF @ 75 V
-
3.1W (Ta), 89W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-Power TDFN
BSC070N10NS5ATMA1
MOSFET N-CH 100V 80A TDSON
Infineon Technologies
35,933
In Stock
1 : ¥14.53000
Cut Tape (CT)
5,000 : ¥6.31405
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
7mOhm @ 40A, 10V
3.8V @ 50µA
38 nC @ 10 V
±20V
2700 pF @ 50 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
TO252-3
IPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3
Infineon Technologies
2,410
In Stock
1 : ¥5.99000
Cut Tape (CT)
2,500 : ¥2.29113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
1.7A (Tc)
10V
3.3Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
-
18.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-VSON-4
IPL60R185C7AUMA1
MOSFET N-CH 600V 13A 4VSON
Infineon Technologies
2,922
In Stock
1 : ¥23.81000
Cut Tape (CT)
3,000 : ¥9.97902
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
185mOhm @ 5.3A, 10V
4V @ 260µA
24 nC @ 10 V
±20V
1080 pF @ 400 V
-
77W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.