Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IXTK200N10L2 MOSFET N-CH 100V 200A TO264 Littelfuse Inc.	524 In Stock	1 : ¥306.14000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	11mOhm @ 100A, 10V	4.5V @ 3mA	540 nC @ 10 V	±20V	23000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IRF3205PBF MOSFET N-CH 55V 110A TO220AB Infineon Technologies	0 In Stock Check Lead Time	1 : ¥12.81000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.