Single FETs, MOSFETs

Results: 3
Manufacturer
EPCNexperia USA Inc.onsemi
Series
-eGaN®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)12A (Ta)18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 12A, 10V16mOhm @ 11A, 5V50mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.5V @ 3mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V14 nC @ 10 V19 nC @ 10 V
Vgs (Max)
+6V, -4V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 50 V528 pF @ 15 V914 pF @ 15 V
Power Dissipation (Max)
1.9W (Ta), 12.5W (Tc)2.5W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
8-SOICDFN2020M-6Die
Package / Case
6-UDFN Exposed Pad8-SOIC (0.154", 3.90mm Width)Die
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS9435A
MOSFET P-CH 30V 5.3A 8SOIC
onsemi
35,235
In Stock
1 : ¥5.50000
Cut Tape (CT)
2,500 : ¥2.09380
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
50mOhm @ 5.3A, 10V
3V @ 250µA
14 nC @ 10 V
±25V
528 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
eGaN Series
EPC2016C
GANFET N-CH 100V 18A DIE
EPC
99,418
In Stock
1 : ¥21.26000
Cut Tape (CT)
2,500 : ¥9.59457
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
16mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
420 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
6-DFN2020MD_View 2
PMPB07R3ENX
PMPB07R3EN/SOT1220-2/DFN2020M-
Nexperia USA Inc.
1,159
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.42052
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta)
4.5V, 10V
8.6mOhm @ 12A, 10V
2.2V @ 250µA
19 nC @ 10 V
±20V
914 pF @ 15 V
-
1.9W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020M-6
6-UDFN Exposed Pad
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.