Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)1.8A (Ta)
Rds On (Max) @ Id, Vgs
230mOhm @ 1.8A, 10V600mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1.8V @ 100µA1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
152.7 pF @ 25 V329 pF @ 25 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-223-4
BSP296NH6327XTSA1
MOSFET N-CH 100V 1.2A SOT223-4
Infineon Technologies
8,896
In Stock
1 : ¥5.34000
Cut Tape (CT)
1,000 : ¥2.52353
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.2A (Ta)
4.5V, 10V
600mOhm @ 1.2A, 10V
1.8V @ 100µA
6.7 nC @ 10 V
±20V
152.7 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
SOT-223-4
BSP372NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4
Infineon Technologies
12,084
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,000 : ¥3.03952
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.8A (Ta)
4.5V, 10V
230mOhm @ 1.8A, 10V
1.8V @ 218µA
14.3 nC @ 10 V
±20V
329 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.