Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 50A, 10V4.4mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 500µA4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5435 pF @ 30 V11000 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 139W (Tc)132W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Supplier Device Package
8-SOP Advance (5x5)PG-TDSON-8-1
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
56,195
In Stock
1 : ¥17.40000
Cut Tape (CT)
5,000 : ¥4.83352
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
4.4mOhm @ 30A, 4.5V
2.5V @ 500µA
60 nC @ 10 V
±20V
5435 pF @ 30 V
-
132W (Tc)
175°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
PG-TDSON-8-1
BSC031N06NS3GATMA1
MOSFET N-CH 60V 100A TDSON-8-1
Infineon Technologies
11,829
In Stock
1 : ¥18.80000
Cut Tape (CT)
5,000 : ¥8.15127
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
10V
3.1mOhm @ 50A, 10V
4V @ 93µA
130 nC @ 10 V
±20V
11000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.