Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4V5V
Rds On (Max) @ Id, Vgs
2Ohm @ 100mA, 4V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.55 nC @ 4.5 V0.56 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
24.6 pF @ 25 V36 pF @ 25 V
Power Dissipation (Max)
310mW (Ta)500mW (Ta)
Supplier Device Package
SOT-23-3X1-DFN1212-3
Package / Case
3-UDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP610DL-7
MOSFET BVDSS: 41V 60V SOT23 T&R
Diodes Incorporated
5,839
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30229
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
180mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
0.56 nC @ 10 V
±30V
24.6 pF @ 25 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
3-XDFN
DMN62D1LFD-7
MOSFET N-CH 60V 400MA 3DFN
Diodes Incorporated
14,758
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.61806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.55 nC @ 4.5 V
±20V
36 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.