Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)7.6A (Ta)32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V16.5mOhm @ 10A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 250µA (Min)2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V41 nC @ 10 V61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V4300 pF @ 20 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)1.9W (Ta)2.5W (Ta), 96W (Tc)
Supplier Device Package
PowerPAK® SO-8SuperSO8TO-236AB
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
76,348
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC014N04LSATMA1
MOSFET N-CH 40V 32/100A SUPERSO8
Infineon Technologies
14,869
In Stock
1 : ¥13.71000
Cut Tape (CT)
5,000 : ¥5.96061
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
32A (Ta), 100A (Tc)
4.5V, 10V
1.4mOhm @ 50A, 10V
2V @ 250µA
61 nC @ 10 V
±20V
4300 pF @ 20 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSO8
8-PowerTDFN
PowerPAK SO-8
SI7852DP-T1-GE3
MOSFET N-CH 80V 7.6A PPAK SO-8
Vishay Siliconix
1,102
In Stock
1 : ¥23.32000
Cut Tape (CT)
3,000 : ¥11.33834
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
7.6A (Ta)
6V, 10V
16.5mOhm @ 10A, 10V
2V @ 250µA (Min)
41 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.