Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedNexperia USA Inc.Taiwan Semiconductor Corporation
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)3.1A (Tc)61A (Tc)64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 14A, 10V11.3mOhm @ 15A, 10V190mOhm @ 3A, 10V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V23 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V425 pF @ 30 V1368 pF @ 30 V3234 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)1.56W (Tc)50W (Tc)91W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-PDFN (3.1x3.1)LFPAK33SOT-23SOT-323
Package / Case
8-PowerWDFNSC-70, SOT-323SOT-1210, 8-LFPAK33 (5-Lead)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
739,940
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
MFG_TO-236-3,-SC-59,-SOT-23-3
TSM2309CX RFG
MOSFET P-CHANNEL 60V 3.1A SOT23
Taiwan Semiconductor Corporation
48,818
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.11861
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.1A (Tc)
4.5V, 10V
190mOhm @ 3A, 10V
2.5V @ 250µA
8.2 nC @ 10 V
±20V
425 pF @ 30 V
-
1.56W (Tc)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
42,632
In Stock
1 : ¥7.39000
Cut Tape (CT)
5,000 : ¥2.66418
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
64A (Tc)
4.5V, 10V
8.5mOhm @ 14A, 10V
2.5V @ 250µA
55 nC @ 10 V
±20V
3234 pF @ 15 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (3.1x3.1)
8-PowerWDFN
LFPAK33
PSMN011-60MSX
MOSFET N-CH 60V 61A LFPAK33
Nexperia USA Inc.
2,902
In Stock
1 : ¥5.91000
Cut Tape (CT)
1,500 : ¥2.50635
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
61A (Tc)
10V
11.3mOhm @ 15A, 10V
4V @ 1mA
23 nC @ 10 V
±20V
1368 pF @ 30 V
-
91W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.