Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLTS2242TRPBF MOSFET P-CH 20V 6.9A 6TSOP Infineon Technologies	50,882 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥1.20348 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6.9A (Ta)	2.5V, 4.5V	32mOhm @ 6.9A, 4.5V	1.1V @ 10µA	12 nC @ 4.5 V	±12V	905 pF @ 10 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
SI8824EDB-T2-E1 MOSFET N-CH 20V 2.1A MICROFOOT Vishay Siliconix	17,068 In Stock	1 : ¥4.60000 Cut Tape (CT) 3,000 : ¥0.71940 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	2.1A (Ta)	1.2V, 4.5V	75mOhm @ 1A, 4.5V	800mV @ 250µA	6 nC @ 4.5 V	±5V	400 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI8817DB-T2-E1 MOSFET P-CH 20V 4MICROFOOT Vishay Siliconix	14,768 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥1.25487 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.1A (Ta)	1.5V, 4.5V	76mOhm @ 1A, 4.5V	1V @ 250µA	19 nC @ 8 V	±8V	615 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.