Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
QFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
70mOhm @ 13.5A, 10V4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V43 nC @ 10 V
Vgs (Max)
±8V±25V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 15 V1400 pF @ 25 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)120W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220-3TO-236AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FQP27P06
MOSFET P-CH 60V 27A TO220-3
onsemi
1,861
In Stock
1 : ¥17.24000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
27A (Tc)
10V
70mOhm @ 13.5A, 10V
4V @ 250µA
43 nC @ 10 V
±25V
1400 pF @ 25 V
-
120W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-236AB
NX3008PBK,215
MOSFET P-CH 30V 230MA TO236AB
Nexperia USA Inc.
112,680
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35472
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
230mA (Ta)
2.5V, 4.5V
4.1Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72 nC @ 4.5 V
±8V
46 pF @ 15 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.