Single FETs, MOSFETs

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon TechnologiesVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)2.2A (Ta)31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
60mOhm @ 16A, 10V100mOhm @ 2.8A, 4.5V5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V10 nC @ 4.5 V63 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V375 pF @ 6 V1200 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)700mW (Ta)110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23SOT-23-3 (TO-236)TO-220AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2301BDS-T1-E3
MOSFET P-CH 20V 2.2A SOT23-3
Vishay Siliconix
40,451
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98884
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.2A (Ta)
2.5V, 4.5V
100mOhm @ 2.8A, 4.5V
950mV @ 250µA
10 nC @ 4.5 V
±8V
375 pF @ 6 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRF5305PBF
MOSFET P-CH 55V 31A TO220AB
Infineon Technologies
38,309
In Stock
1 : ¥11.33000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
60mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
2N7002E
2N7002EY
N-CHANNEL SMD MOSFET ESD PROTECT
ANBON SEMICONDUCTOR (INT'L) LIMITED
77,384
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19370
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
5Ohm @ 300mA, 10V
2.5V @ 250µA
2.4 nC @ 10 V
±20V
18 pF @ 30 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.