Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Current - Continuous Drain (Id) @ 25°C
1A (Ta)7A (Ta)
Rds On (Max) @ Id, Vgs
27mOhm @ 7A, 10V460mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 5 V47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 10 V4100 pF @ 10 V
Power Dissipation (Max)
800mW (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-SOPTUMT3
Package / Case
3-SMD, Flat Leads8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TUMT3
RSF010P05TL
MOSFET P-CH 45V 1A TUMT3
Rohm Semiconductor
9,109
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.25974
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
45 V
1A (Ta)
4V, 10V
460mOhm @ 1A, 10V
2.5V @ 1mA
2.3 nC @ 5 V
±20V
160 pF @ 10 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
8-SOIC
RSH070P05GZETB
MOSFET P-CH 45V 7A 8SOP
Rohm Semiconductor
7,443
In Stock
1 : ¥17.16000
Cut Tape (CT)
2,500 : ¥6.24970
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
27mOhm @ 7A, 10V
2.5V @ 1mA
47.6 nC @ 5 V
±20V
4100 pF @ 10 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.