Single FETs, MOSFETs

Results: 7
Manufacturer
Diodes IncorporatedMicrochip TechnologyNEC CorporationSTMicroelectronics
Series
-SuperMESH3™
Packaging
BagBulkCut Tape (CT)Tape & Box (TB)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
175mA (Tj)530mA (Tj)600mA (Tc)640mA (Tj)650mA (Tj)1.1A (Ta)1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 5V4V, 10V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
330mOhm @ 3A, 10V400mOhm @ 500mA, 10V600mOhm @ 3A, 10V1.2Ohm @ 1A, 10V1.3Ohm @ 500mA, 5V4.5Ohm @ 1A, 10V6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 1mA2.5V @ 1mA3V @ 1mA3.5V @ 10mA4.5V @ 50µA
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V190 pF @ 20 V200 pF @ 20 V230 pF @ 10 V235 pF @ 50 V300 pF @ 25 V350 pF @ 25 V
Power Dissipation (Max)
740mW (Ta)850mW (Ta)1W (Tc)2.5W (Tc)750W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
TO-92TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3
STQ2LN60K3-AP
MOSFET N-CH 600V 600MA TO92-3
STMicroelectronics
10,693
In Stock
1 : ¥5.09000
Cut Tape (CT)
2,000 : ¥1.70251
Tape & Box (TB)
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
600mA (Tc)
10V
4.5Ohm @ 1A, 10V
4.5V @ 50µA
12 nC @ 10 V
±30V
235 pF @ 50 V
-
2.5W (Tc)
150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3(StandardBody),TO-226_straightlead
TP2104N3-G
MOSFET P-CH 40V 175MA TO92-3
Microchip Technology
1,748
In Stock
1 : ¥6.40000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
40 V
175mA (Tj)
4.5V, 10V
6Ohm @ 500mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
VN0300L-G
MOSFET N-CH 30V 640MA TO92-3
Microchip Technology
1,744
In Stock
1 : ¥11.74000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
30 V
640mA (Tj)
5V, 10V
1.2Ohm @ 1A, 10V
2.5V @ 1mA
-
±30V
190 pF @ 20 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
TN0702N3-G
MOSFET N-CH 20V 530MA TO92-3
Microchip Technology
2,300
In Stock
1 : ¥12.48000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
20 V
530mA (Tj)
2V, 5V
1.3Ohm @ 500mA, 5V
1V @ 1mA
-
±20V
200 pF @ 20 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
ZVN4306A
MOSFET N-CH 60V 1.1A TO92-3
Diodes Incorporated
1,697
In Stock
1 : ¥12.73000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.1A (Ta)
5V, 10V
330mOhm @ 3A, 10V
3V @ 1mA
-
±20V
350 pF @ 25 V
-
850mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
VP3203N3-G
MOSFET P-CH 30V 650MA TO92-3
Microchip Technology
1,488
In Stock
1 : ¥15.19000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
30 V
650mA (Tj)
4.5V, 10V
600mOhm @ 3A, 10V
3.5V @ 10mA
-
±20V
300 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
2,162
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
4V, 10V
400mOhm @ 500mA, 10V
2.5V @ 1mA
-
±20V
230 pF @ 10 V
-
750W (Ta)
150°C
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.