Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V, 5V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V12 nC @ 2.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V405 pF @ 10 V
Power Dissipation (Max)
430mW1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BAT54
2N7002K
MOSFET, N-CH, SINGLE, 0.3A, 60V,
Good-Ark Semiconductor
72,773
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.19452
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
10V, 5V
-
2.5V @ 250µA
0.4 nC @ 4.5 V
±20V
30 pF @ 25 V
-
430mW
-55°C ~ 175°C
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
BAT54
GSF2301
MOSFET, P-CH, SINGLE, -3A, -20V,
Good-Ark Semiconductor
10,974
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.36235
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
110mOhm @ 3A, 4.5V
1V @ 250µA
12 nC @ 2.5 V
±12V
405 pF @ 10 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.