Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRLML0100TRPBF MOSFET N-CH 100V 1.6A SOT23 Infineon Technologies	36,158 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥1.16191 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.6A (Ta)	4.5V, 10V	220mOhm @ 1.6A, 10V	2.5V @ 25µA	2.5 nC @ 4.5 V	±16V	290 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IRFR5410TRPBF MOSFET P-CH 100V 13A DPAK Infineon Technologies	22,174 In Stock	1 : ¥11.58000 Cut Tape (CT) 2,000 : ¥4.78090 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	205mOhm @ 7.8A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ2398ES-T1_GE3 MOSFET N-CH 100V 1.6A SOT23-3 Vishay Siliconix	219,219 In Stock	1 : ¥4.93000 Cut Tape (CT) 3,000 : ¥1.88700 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.6A (Tc)	10V	300mOhm @ 1.5A, 10V	3.5V @ 250µA	3.4 nC @ 10 V	±20V	152 pF @ 50 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.