Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedEPCToshiba Semiconductor and StorageVishay Siliconix
Series
-eGaN®TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)500mA (Ta)4.6A (Ta)5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V2.5V, 4.5V5V5V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 5A, 4.5V46mOhm @ 1A, 4.5V3.3Ohm @ 50mA, 5V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA1.4V @ 250µA2.5V @ 20µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.044 nC @ 5 V26 nC @ 4.5 V33 nC @ 4.5 V
Vgs (Max)
+6V, -4V±6V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
8.4 pF @ 50 V50 pF @ 25 V2700 pF @ 10 V
Power Dissipation (Max)
370mW (Ta)500mW (Ta)1.47W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C
Supplier Device Package
4-MicrofootDieSOT-23-3UFM
Package / Case
3-SMD, Flat Leads4-XFBGA, CSPBGADieTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
366,774
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
4-Micro Foot
SI8409DB-T1-E1
MOSFET P-CH 30V 4.6A 4MICROFOOT
Vishay Siliconix
7,173
In Stock
1 : ¥8.78000
Cut Tape (CT)
3,000 : ¥3.62189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.6A (Ta)
2.5V, 4.5V
46mOhm @ 1A, 4.5V
1.4V @ 250µA
26 nC @ 4.5 V
±12V
-
-
1.47W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA, CSPBGA
eGaN Series
EPC2038
GANFET N-CH 100V 500MA DIE
EPC
169,916
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.64058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
500mA (Ta)
5V
3.3Ohm @ 50mA, 5V
2.5V @ 20µA
0.044 nC @ 5 V
+6V, -4V
8.4 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
4,294
In Stock
1 : ¥6.16000
Cut Tape (CT)
3,000 : ¥1.46129
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
5.4A (Ta)
1.2V, 4.5V
17mOhm @ 5A, 4.5V
1V @ 1mA
33 nC @ 4.5 V
±6V
2700 pF @ 10 V
-
500mW (Ta)
150°C
Surface Mount
UFM
3-SMD, Flat Leads
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.