Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 4V
Rds On (Max) @ Id, Vgs
54mOhm @ 3.2A, 4.5V3.6Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
900mV @ 250µA1.5V @ 100µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
13.5 pF @ 3 V551 pF @ 10 V
Power Dissipation (Max)
100mW (Ta)400mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DFN1010D-3SSM
Package / Case
3-XDFN Exposed PadSC-75, SOT-416
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3-XFDFN Exposed Pad
PMXB43UNEZ
MOSFET N-CH 20V 3.2A DFN1010D-3
Nexperia USA Inc.
48,713
In Stock
1 : ¥3.78000
Cut Tape (CT)
5,000 : ¥0.81382
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
54mOhm @ 3.2A, 4.5V
900mV @ 250µA
10 nC @ 4.5 V
±8V
551 pF @ 10 V
-
400mW (Ta), 8.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
43,983
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.36802
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13.5 pF @ 3 V
-
100mW (Ta)
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.