Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageTransphorm
Series
HEXFET®, StrongIRFET™OptiMOS™StrongIRFET™2SuperGaN™U-MOSIX-HU-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Cascode Gallium Nitride FET)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V40 V650 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 143A (Tc)46.5A (Tc)90A (Tc)100A (Ta)120A (Ta)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 100A, 10V1.9mOhm @ 60A, 6V2.3mOhm @ 50A, 10V2.3mOhm @ 70A, 10V3.1mOhm @ 30A, 10V41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.5V @ 500µA3V @ 500µA3.4V @ 81µA3.9V @ 150µA4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 0 V51 nC @ 10 V76 nC @ 10 V102 nC @ 10 V103 nC @ 10 V225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V4800 pF @ 20 V5300 pF @ 15 V5490 pF @ 10 V5500 pF @ 10 V7330 pF @ 25 V
Power Dissipation (Max)
3W (Ta), 150W (Tc)94W (Tc)156W (Tc)180W (Tc)230W (Tc)
Operating Temperature
-55°C ~ 150°C-55°C ~ 175°C (TJ)175°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAK+PG-TO252-3PG-TO252-3-11TO-247-3TO-262
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TP65H035G4WS
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
773
In Stock
1 : ¥147.28000
Tube
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
46.5A (Tc)
10V
41mOhm @ 30A, 10V
4.8V @ 1mA
22 nC @ 0 V
±20V
1500 pF @ 400 V
-
156W (Tc)
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247-3
TO252-3
IPD031N03LGATMA1
MOSFET N-CH 30V 90A TO252-3
Infineon Technologies
4,158
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥4.14239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
90A (Tc)
4.5V, 10V
3.1mOhm @ 30A, 10V
2.2V @ 250µA
51 nC @ 10 V
±20V
5300 pF @ 15 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-262-3
IRFSL7437PBF
MOSFET N-CH 40V 195A TO262
Infineon Technologies
2,740
In Stock
1 : ¥17.16000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.8mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
2,570
In Stock
1 : ¥18.06000
Cut Tape (CT)
2,000 : ¥5.34365
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Ta)
4.5V, 10V
2.3mOhm @ 50A, 10V
2.5V @ 500µA
76 nC @ 10 V
±20V
5490 pF @ 10 V
-
180W (Tc)
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
4,866
In Stock
1 : ¥21.51000
Cut Tape (CT)
2,000 : ¥6.57504
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Ta)
6V, 10V
1.9mOhm @ 60A, 6V
3V @ 500µA
103 nC @ 10 V
±20V
5500 pF @ 10 V
-
180W (Tc)
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
1,706
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,000 : ¥3.99598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
27A (Ta), 143A (Tc)
6V, 10V
2.3mOhm @ 70A, 10V
3.4V @ 81µA
102 nC @ 10 V
±20V
4800 pF @ 20 V
-
3W (Ta), 150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.